E-FIELD WRITABLE NON-VOLATILE MAGNETIC RANDOM ACCESS MEMORY BASED ON MULTIFERROICS

摘要

A multiferroic stack consists of a ferromagnetic film elasticaily coupled to a ferroelectric layer actuated with a perpendicular electric field to define the resuliing electrical resistance of the stack. Alternatively, a multiferroic stack consists of a magnetic spin valve elasticaily coupled to a ferroelectric layer actuated with a perpendicular electric field to define the resulting electrical resistance of the stack. The scaling and incorporation of these stacks as writable magnetic bits into non-volatile, ullxa-low power, high-density magnetic memory storage devices is contemplated.