METHOD FOR MANUFACTURING CIGS THIN FILM FOR SOLAR CELL USING SIMPLIFIED CO-EVAPORATION AND CIGS THIN FILM FOR SOLAR CELL MANUFACTURED USING THE METHOD

摘要

Disclosed are a method for manufacturing CIGS thin film for a solar cell using simplified co-evaporation and a CIGS thin film for a solar cell manufactured using the method. The method for manufacturing a CIGS thin film for a solar cell according to the present invention comprises: (step a) depositing Cu, Ga and Se on a substrate, which is at 500-600°C, via co-evaporation; (step b) depositing Cu, Ga, Se and In via co-evaporation while maintaining the same substrate temperature as in step a; and (step c) while lowering the temperature of the substrate, sequentially depositing Ga and Se via co-evaporation, then depositing just Se via vacuum evaporation. Accordingly, the processing steps are simplified compared to the three-step co-evaporation, and the benefits of band-gap grading, from the crystal growth within the thin film and compositional distribution of Ga, are fully realized, thus allowing processing efficiency to be improved.