首页> 外国专利> CIGS MANUFACTURING METHOD FOR CIGS THIN FILM TYPE ABSORBER LAYER MANUFACTURING METHOD FOR THIN FILM SOLAR CELL USING THEREOF AND THIN FILM SOLAR CELL

CIGS MANUFACTURING METHOD FOR CIGS THIN FILM TYPE ABSORBER LAYER MANUFACTURING METHOD FOR THIN FILM SOLAR CELL USING THEREOF AND THIN FILM SOLAR CELL

机译:CIGS薄膜太阳能电池的CIGS薄膜型吸收层制造方法的CIGS制造方法及薄膜太阳能电池

摘要

The present invention is a method for manufacturing a light absorption layer of a CIGS solar cell, in which Cu, In, Ga and Se are simultaneously evaporated using a single process method to deposit a thin film layer on a substrate n times (where n is a natural number greater than or equal to 2) The present invention relates to a method for manufacturing a CIGS light absorption layer in which a thin film layer consisting of n layers is repeatedly formed, a method for manufacturing a thin film solar cell using the CIGS thin film type light absorption layer prepared thereby, and a thin film solar cell manufactured thereby, according to the present invention In the case of manufacturing the CIGS light absorption layer through the method, a thin film layer having a bandgap slope can be manufactured through a single process method, so that a thin film having a bandgap slope can be manufactured even though the process is simple and thin.
机译:本发明是一种制造CIGS太阳能电池的光吸收层的方法,其中Cu,In,Ga和Se使用单个工艺方法同时蒸发,以在基板n次上沉积薄膜层(其中n是n 大于或等于2)的自然数本发明涉及制造用于制造CIGS光吸收层的方法,其中重复形成由N层组成的薄膜层,一种使用CIGS制造薄膜太阳能电池的方法 由此制备薄膜型光吸收层,与制造的薄膜太阳能电池由此,根据本发明在制造CIGS光吸收层通过该方法的情况下,可以通过a通过a制造具有带隙斜率的薄膜层 单个工艺方法,使得即使过程简单且薄,也可以制造具有带隙斜率的薄膜。

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