首页> 外国专利> Mo CIGS CIGS CIGS Control method of preferred orientation of Mo and CIGS thin film using a graphene coating manufacturing method of CIGS type solar cell and the CIGS type solar cell made by the manufacturing method

Mo CIGS CIGS CIGS Control method of preferred orientation of Mo and CIGS thin film using a graphene coating manufacturing method of CIGS type solar cell and the CIGS type solar cell made by the manufacturing method

机译:Mo CIGS CIGS CIGS使用CIGS型太阳能电池的石墨烯涂层的制造方法和通过该方法制造的CIGS型太阳能电池的Mo和CIGS薄膜的优选取向的控制方法

摘要

The present invention provides a new method for manufacturing solar cell including a glass substrate, a Mo rear surface electrode and a CIGS type thin film, which can control and manufacture the Mo rear surface electrode and the CIGS type thin film in a desired crystal orientation. A method for controlling a crystal of the Mo rear surface electrode and the CIGS type thin film using a graphene layer comprises the following steps: forming a graphene layer on the glass substrate; forming the Mo rear surface electrode on the graphene layer; forming a CIGS type precursor layer on the Mo rear surface electrode; and selenizing or sulphurizing the CIGS type precursor layer under an atmosphere in which selenium (Se) or sulfur (S) are supplied.
机译:本发明提供了一种用于制造包括玻璃基板,Mo背面电极和CIGS型薄膜的太阳能电池的新方法,其可以以期望的晶体取向控制和制造Mo背面电极和CIGS型薄膜。一种使用石墨烯层控制Mo背面电极和CIGS型薄膜的晶体的方法,包括以下步骤:在玻璃基板上形成石墨烯层;以及在玻璃基板上形成石墨烯层。在石墨烯层上形成Mo背面电极。在Mo背面电极上形成CIGS型前驱体层。在提供硒(Se)或硫(S)的气氛下使CIGS型前体层硒化或硫化。

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