CHEMICAL VAPOR DEPOSITED FILM FORMED BY PLASMA CHEMICAL VAPOR DEPOSITION METHOD

摘要

The purpose of the present invention is to provide a film structure for a gas barrier film comprising a base material with mixed organic and inorganic substances and having high adhesion with both substances and high barrier characteristics, also provided is a method for manufacturing the same. Specifically, provided are: a chemical vapor deposited film formed by the plasma chemical vapor deposition (CVD) method and comprising silicon atoms, oxygen atoms, carbon atoms, and hydrogen atoms, with the concentration of oxygen atoms being 10-35% by element; and a layered body, comprising this chemical vapor deposited film, a second chemical vapor deposited film comprising silicon atoms and at least 0% and less than 10% by element of oxygen atoms and formed by the plasma CVD method, and a third chemical vapor deposited film comprising silicon atoms and more than 35% and no more than 70% by element of oxygen atoms and formed by the plasma CVD method, wherein the second chemical vapor deposited film and the third chemical vapor deposited film are layered onto one surface of the chemical vapor deposited film.