Method for forming a deposited film by plasma chemical vapor deposition and apparatus for forming a deposited film by plasma chemical vapor deposition

摘要

A film-forming method by a plasma CVD process, comprising introducing a raw material gas into a reaction chamber containing a substrate positioned therein through a plurality of gas ejecting holes provided at a gas feed pipe and introducing a discharging energy into said reaction chamber to excite and decompose said film-forming raw material gas introduced into said reaction chamber whereby causing the formation of a deposited film on said substrate, characterized in that the introduction of said film-forming raw material gas into said reaction chamber is conducted by ejecting the film-forming raw material gas toward a member opposed to the substrate from each of right and left sides of the gas feed pipe through the gas ejecting holes of the gas feed pipe at a gas- ejecting angle (a) of 45°≦(a) 90. degree. to a line which is passing through between said cylindrical substrate and each of said plurality of gas feed pipes.