4H- SiC SINGLE CRYSTAL GROWING METHOD AND A GROWING APPARATUS CAPABLE OF CONTROLLING THE LENGTH OF A CRUCIBLE

摘要

PURPOSE: A 4H-SiC single crystal growing method and a growing apparatus are provided to grow various kinds of single crystal by differently setting a growth temperature.;CONSTITUTION: A seed(130) is attached to a seed holder(120). The seed holder downwardly mounts the seed on the inner upper side of a crucible(110) installed in a reaction chamber. SiC powder that is a single crystal raw material(170) is inputted to the crucible. Single crystal raw materials are sublimated by heating and decompressing the crucible. The crucible has a length of 150 to 160 mm.;COPYRIGHT KIPO 2013