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Crucible for growing SiC single crystal, method for producing SiC single crystal and apparatus for manufacturing SiC single crystal

摘要

Problem to be solved: to fabricate SiC single crystal growth crucible capable of making SiC material in the crucible and to effectively utilize SiC raw material, and to manufacture SiC single crystal using the same, and SiC Problem to be solved: to provide a single crystal manufacturing apparatus.A crucible for growing SiC single crystals comprises a raw material accommodating portion for accommodating SiC raw material and a seed crystal support portion for supporting a seed crystal disposed above the raw material accommodating portion, and the raw material accommodating portion has a recess portion tapered toward the lower side.Diagram

著录项

  • 公开/公告号JP2020111481A

    专利类型发明专利

  • 公开/公告日2020.07.27

    原文格式PDF

  • 申请/专利权人 昭和電工株式会社;

    申请/专利号JP2019002576

  • 发明设计人 藤川 陽平;

    申请日2019.01.10

  • 分类号

  • 国家 JP

  • 入库时间 2022-08-21 10:58:15

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