AN IMPROVED GAP FILLING METHOD FOR DUAL DAMASCENE PROCESS

摘要

PURPOSE: A gap filling method for a dual damascene process is provided to improve gap filling performance by preventing a trench from protruding. CONSTITUTION: A patterned dielectric layer with a plurality of first opening parts is formed(15). A conductive liner layer which partially fills the first opening part is formed on a patterned dielectric layer(20). A plurality of second opening parts are formed by forming a patterned trench mask layer on a part of the conductive liner layer outside the first opening part(25). The second opening part is partially arranged on the first opening part. Conductive materials are deposited on the first opening part to form a plurality of vias and the conductive materials are deposited on the second opening part to form a plurality of metal lines(30). A trench mask layer is removed(35). [Reference numerals] (15) Forming a patterned dielectric layer with a plurality of first opening parts; (20) Forming a conductive liner layer partially filling a first opening part on a patterned dielectric layer; (25) Forming a plurality of second opening parts by forming a patterned trench mask layer on a part of the conductive liner layer outside the first opening part; (30) Depositing conductive materials on a first opening part to form a plurality of vias and conductive materials on a second opening part to form a plurality of metal lines; (35) Removing a trench mask layer; (AA) Start; (BB) Finish