METHOD FOR MANUFACTURING A REPLACEMENT SOURCE/DRAIN FINFET CAPABLE OF REDUCING A SOURCE AND A DRAIN RESISTANCE

摘要

PURPOSE: A method for manufacturing a replacement source/drain FINFET is provided to increase the mobility of electrons and holes in a channel by transforming semiconductor in the channel.;CONSTITUTION: A FINFET with a pin including a source, a drain region and a channel region is formed. The pin is etched on a semiconductor wafer(302). An insulating layer touches the channel region(304). A gate stack is made of a conductive gate material and touches the insulating layer(304). The source and the drain regions are etched to expose the first region of the pin(306). A part of the first region is doped(1602).;COPYRIGHT KIPO 2013;[Reference numerals] (1602) Doping the exposed area of the pin structure; (1604) Growing silicon on the sides of a channel in the source and drain areas; (302) Etching a pin structure having a source area, a drain area, and a channel area; (304) Forming a gate; (306) Etching and removing the source and drain areas of the pin structure