NONVOLATILE POLYMER MEMORY DEVICE INCLUDING A BUFFER LAYER AND A MANUFACTURING METHOD THEREOF CAPABLE OF MAINTAINING HIGH MEMORY MARGIN OF A PEDOT:PSS MEMORY DEVICE

摘要

PURPOSE: A nonvolatile polymer memory device including a buffer layer and a manufacturing method thereof are provided to prevent an oxide layer between a bottom electrode and a PEDOT:PSS thin film layer by inserting the buffer layer between the bottom electrode and the PEDOT:PSS thin film layer.;CONSTITUTION: A bottom electrode(20) is formed on a substrate(10). A buffer layer(30) is formed on the bottom electrode. A PEDOT:PSS thin film layer(40) is formed on the buffer layer. A top electrode(50) is formed on the PEDOT:PSS thin film layer. The buffer layer is made of one or more mixtures selected among PMMA, PI, PVP, PS, and PE groups.;COPYRIGHT KIPO 2013