SEMICONDUCTOR DEVICE WITH A STRAINED CHANNEL INDUCED BY A HIGH-K CAPPING METAL LAYER CAPABLE OF IMPROVING THE MOBILITY OF ELECTRONS

摘要

PURPOSE: A semiconductor device with a strained channel induced by a high-K capping metal layer is provided to improve the performance of a device by using a metal gate transistor.;CONSTITUTION: A semiconductor substrate is provided(102). A HK(High-K) dielectric layer is deposited on the semiconductor substrate(104). A tensile stress HK capping layer is deposited on the HK dielectric layer(106). The tensile stress HK capping layer is removed from an NMOS region(108). A compressive stress capping layer is deposited on the NMOS region(110).;COPYRIGHT KIPO 2013;[Reference numerals] (102) Providing a substrate; (104) Depositing an HK layer; (106) Depositing a tensile stress HK capping layer; (108) Removing the tensile stress HK capping layer from an NMOS; (110) Depositing a compressive stress capping layer on the NMOS; (112) Charging metal;