Electron Mobility of Doped Strained Si1-x Gex Alloys Grown on Si(100) Substrate①②

摘要

The electron mobility for strained Si1-xGex alloy layer grown on Si(100) substrate has been calculated for doping rage of 1017 cm-3 to 1020 cm-3with Ge contents of 0.0≤x≤1.0.The results show a decrease in the mobility with increasing of Ge content and doping concentration.The electron mobility in-plane is foud to be smaller than the perpendicular component.