THIN FILM TRANSISTOR ARRAY DEVICE, ORGANIC EL DISPLAY DEVICE, AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR ARRAY DEVICE

摘要

thin film transistor array device 100 is configured by the first crystal grains of a first average grain size TFT (10a) and a drive having a crystalline semiconductor film (5a), for a switch having a second crystalline semiconductor film (5b) is configured by a first average grain having an average grain size is smaller than the second average grain size, grain size and a TFT (10b). A first crystalline semiconductor film (5a) and the second crystalline semiconductor film (5b) is, using a laser having a light intensity distribution of a Gaussian distribution of amorphous non-crystalline semiconductor film such that the temperature is in the range of 600 to 1100 a semiconductor film formed by laser irradiation, the first crystalline semiconductor film (5a) is formed to ensure that the temperature range of 1100 to 1414 by the latent heat by laser irradiation. A second crystalline semiconductor film (5b) is formed at the same time as the formation of the first crystalline semiconductor film (5a),. ;