IO ESD DEVICE AND A FORMING METHOD THEREOF, CAPABLE OF REMOVING EXTRA LITHOGRAPHY MASKS

摘要

PURPOSE: An IO ESD device and a forming method thereof are provided to reduce leakage currents from ESD diodes by separately forming p-type epitaxial regions from silicon germanium stressors of p-type FinFETs.;CONSTITUTION: An n-type well region (32) is formed on a semiconductor substrate. A p-type semiconductor region is formed on the n-type well region. The p-type semiconductor region and the n-type well region form a pn junction of an ESD diode. The p-type semiconductor region does not include germanium. The p-type semiconductor region is formed between two gate electrodes (122).;COPYRIGHT KIPO 2013