首页> 外国专利> Method of forming mask for lithography, method of forming mask data for lithography, method of manufacturing back-illuminated solid-state imaging device, back-illuminated solid-state imaging device and electronic device

Method of forming mask for lithography, method of forming mask data for lithography, method of manufacturing back-illuminated solid-state imaging device, back-illuminated solid-state imaging device and electronic device

机译:形成用于光刻的掩模的方法,形成用于光刻的掩模数据的方法,制造背照式固态成像装置的方法,背照式固态成像装置和电子设备

摘要

A method of forming a mask for lithography includes the step of forming the mask by using reverse data in which positions of at least part of output terminals are reversed, when forming the mask for lithography used for manufacturing a back-illuminated solid-state imaging device which takes incident light from the side of a surface opposite to the side of a surface on which wiring of a device region in which photoelectric conversion elements are formed is formed.
机译:形成用于光刻的掩模的方法包括以下步骤:当形成用于制造背照式固态成像装置的用于光刻的掩模时,通过使用反向数据来形成掩模,在该反向数据中,输出端子的至少一部分的位置被反转。入射光从与形成有光电转换元件的器件区域的布线形成于其上的表面的一侧相反的表面的一侧入射。

著录项

  • 公开/公告号US8338212B2

    专利类型

  • 公开/公告日2012-12-25

    原文格式PDF

  • 申请/专利权人 KEIJI MABUCHI;

    申请/专利号US201113167832

  • 发明设计人 KEIJI MABUCHI;

    申请日2011-06-24

  • 分类号H01L21/00;

  • 国家 US

  • 入库时间 2022-08-21 16:44:36

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