SURFACE PROCESSING METHOD OF SINGLE CRYSTAL SiC SUBSTRATE, ITS MANUFACTURING METHOD AND GRINDING PLATE FOR SURFACE PROCESSING OF SINGLE CRYSTAL SiC SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a surface processing method of a single crystal SiC substrate which can be applied to a mass production process because of using an existing grinding device, and in which the grinding device is equipped with a grinding plate having a structure for avoiding generation of fine defects and the surface of a single crystal SiC substrate is processed.SOLUTION: A grinding device is equipped with a grinding plate 10 in which a soft pad 2 and a hard pad 3 are stuck in order on a base metal 1 of a flat surface, and abrasive grains constituted by at least one or more kind of metal oxide which is softer than single crystal SiC and has a band gap are fixed on the surface of the hard pad 3. Oxidation product is generated by the grinding plate 10, and the surface of a single crystal SiC substrate is ground while removing the oxidation product.