首页> 外国专利> TENTATIVELY FIXING FILM, TENTATIVELY FIXING FILM SHEET AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

TENTATIVELY FIXING FILM, TENTATIVELY FIXING FILM SHEET AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

机译:永久固定膜,永久固定膜片及半导体装置的制造方法

摘要

PROBLEM TO BE SOLVED: To provide a tentatively fixing film which has low-temperature adhesion enough to adequately fix a semiconductor wafer to a support member even when lamination is performed at a low temperature, and has a sufficient heat resistance, and by which a semiconductor wafer after processing can be separated from the support member easily, and to provide a tentatively fixing film sheet, and a manufacturing method of a semiconductor device by use of the tentatively fixing film.SOLUTION: A manufacturing method of a semiconductor device comprises the steps of: tentatively fixing a semiconductor wafer 70 to a support member 60 with a tentatively fixing film 20 interposed between the semiconductor wafer and the support member, provided that the tentatively fixing film includes a polyimide resin produced by the reaction between diamine and acid dianhydride including 20 mol% or more of tetracarboxylic dianhydride to the total amount of acid dianhydride; performing a predetermined processing on the semiconductor wafer remaining tentatively fixed to the support member; separating the processed semiconductor wafer from the support member by bringing an organic solvent into contact with the tentatively fixing film to dissolve part or all of the tentatively fixing film into the organic solvent; and splitting the processed semiconductor wafer into individual pieces.
机译:解决的问题:提供一种临时固定膜,其即使在低温下进行层压时也具有足够的低温粘附力以将半导体晶片充分固定到支撑构件上,并且具有足够的耐热性,并且可以容易地将处理后的晶片与支撑构件分离,并提供临时固定的膜片,以及使用该临时固定的膜的半导体器件的制造方法。解决方案:半导体器件的制造方法包括以下步骤: :通过在半导体晶片和支撑构件之间插入临时固定膜20,将半导体晶片70临时固定在支撑构件60上,只要该临时固定膜包括通过二胺和酸二酐之间的反应生成的聚酰亚胺树脂,该聚酰亚胺树脂包括20mol四羧酸二酐相对于酸二酐总量的%或更多;对暂时固定在支撑部件上的半导体晶片进行规定的处理。通过使有机溶剂与临时定影膜接触以将部分或全部临时定影膜溶解于有机溶剂中,将处理后的半导体晶片与支撑构件分离。并将处理后的半导体晶片分割成单块。

著录项

  • 公开/公告号JP2014029999A

    专利类型

  • 公开/公告日2014-02-13

    原文格式PDF

  • 申请/专利权人 HITACHI CHEMICAL CO LTD;

    申请/专利号JP20130134149

  • 申请日2013-06-26

  • 分类号H01L21/304;C09J179/08;C09J11/04;C09J11/06;C09J4;C09J163;C09J123;C09J183/04;C09J7/02;H01L21/301;

  • 国家 JP

  • 入库时间 2022-08-21 16:17:49

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