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Apparatus for manufacturing a SiC single crystal, a jig for use in manufacturing apparatus and manufacturing method of the SiC single crystal

机译:用于制造SiC单晶的设备,用于该SiC单晶的制造设备的夹具和制造方法

摘要

PROBLEM TO BE SOLVED: To provide a device for producing a SiC single crystal, which can suppress generation of polycrystals.;SOLUTION: A tool 41 and a crucible 6 are accommodated in a chamber 1. An SiC melt is housed in the crucible 6. The tool 41 includes a seed shaft 411 and a cover member 412. The seed shaft 411 can be raised and lowered, and an SiC seed crystal 9 is attached to the bottom surface thereof. The cover member 412 is arranged at the bottom end of the seed shaft 411. The cover member 412 is a frame with an open lower end, and the bottom end of the seed shaft is arranged in the inside of the cover member 412. When producing an SiC single crystal, the SiC seed crystal is immersed in the SiC melt. Also, the bottom of the cover member 412 is immersed in the SiC melt. For that reason, the cover member 412 covers and retains the heat of the portion of the SiC melt around the SiC single crystal.;COPYRIGHT: (C)2012,JPO&INPIT
机译:解决的问题:提供一种能够抑制多晶的产生的SiC单晶的制造装置。解决方案:在腔室1中容纳工具41和坩埚6。在坩埚6中容纳SiC熔体。工具41包括籽晶轴411和盖构件412。籽晶轴411可以升高和降低,并且SiC籽晶9附接到其底表面。盖构件412布置在种子轴411的底端。盖构件412是具有开放的下端的框架,并且种子轴的底端布置在盖构件412的内部。如果是SiC单晶,则将SiC籽晶浸入SiC熔体中。而且,盖构件412的底部浸入SiC熔体中。因此,覆盖部件412覆盖并保持SiC单晶周围的SiC熔体的一部分的热量。版权所有:(C)2012,日本特许厅&INPIT

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