Slicing the silicon monocrystal ingot which

摘要

PROBLEM TO BE SOLVED: To provide a method of heat treating a silicon wafer reducing crystalline defects such as voids in a front surface part of a wafer serving as a device active region and suppressing elongation of slip dislocation under a load such as a thermal stress in a device process.;SOLUTION: In the method of heat treating the silicon wafer obtained by slicing a silicon monocrystalline ingot manufactured by Czochralski method, a rapid heating and rapid cooling heat treatment is performed on the silicon wafer which is at least 1.4×10¹⁸ atoms/cm³ in oxygen concentration under an oxygen-containing atmosphere and at a highest end-point temperature which is at least 1,325°C and not more than the melting point of the silicon.;COPYRIGHT: (C)2011,JPO&INPIT