In the ingot growth device which grows the monocrystal silicon ingot from the monocrystal silicon ingot growth device and

摘要

PROBLEM TO BE SOLVED: To provide a coating material having high emissivity and capable of strongly sticking on stainless steel over the wide range of from room temperature to high temperature (100°C).;SOLUTION: The coating material for absorbing radiation heat is manufactured by mixing and agitating 10-15 wt.% silica, 5-10 wt.% graphite, and 75-85 wt.% IPA. In a sealed furnace or ingot growing equipment, there is comprised of a quartz crucible, a heating device, an ingot pull up device, a heat shield for keeping temperature distribution of coagulation boundary face constant, and a cooling device, and further more an ingot cooling means for cooling the growing silicon ingot by absorbing radiation heat radiated from the ingot. The ingot cooling means is provided with a circulation cooling tube, the outer surface of which is coated with the radiation absorbing layer.;COPYRIGHT: (C)2003,JPO