HEAT EXCHANGER METHOD - INGOT CASTING FIXED ABRASIVE METHOD - MULTI-WIRE SLICING (PHASEⅡ) Silicon Sheet Growth Development for the Large Area Silicon Sheet Task of the Low Cost Silicon Solar Array Project

摘要

A high degree of crystallinity has been achieved in ingots cast in this quarter. Since most of the growth took place near the solidification temperature, the top portion of the ingot was solidified by freezing from the surface. The thickness of this layer was reduced with the control of thermal flow characteristics in the furnace. The crucibles used in this study have a non¬uniform bottom which is not conducive to proper heat transfer during solidification.nIn an effort to achieve high packing density of solar cells in the module with maximum material utilization, an attempt was made to cast a square cross-section ingot.