Nitridation Kinetics of Silicon Monocrystal and Morphology of Nitride Film

摘要

Basing on TGA （thermal gravimetric analysis） of thermal nitridation at l200, l250, l300℃, respectively,analysis of high temperature kinetics for nitridation of silicon monocrystal has been carried out. According tothe theory for kinetics of reaction of vapour with solid phase a nitridation kinetic model, from which it can beshown thal the rate of nitridation reaction of silicon crystal should be controlled by three stage limiting factors,was proposed. These limiting factors are chemical reaction, chemical reaction mixed with diffusion and diffu-sion. Using this model to treat our experimental data, satisfactory correlation coefficient and apparentactivation energy of nitridation of p-type （lll） silicon crystal have been obtained. The nitride film was identi’fied to be a-Si₃N₄ （Hexagonal, a=0.7758nm,c_o=0.5623nm） by X-ray diffraction analysis. Morphology ofthe nitride films formed in different nitridation duration was observed in both planar andcross-sectional viewsby SEM （scanning electron microscope）.