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A comprehensive study on slicing processes optimization of silicon ingot for photovoltaic applications

机译:光伏应用硅锭切片工艺优化的综合研究

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摘要

Systematic cutting process design and optimization problems are studied for surface roughness minimization by stochastic algorithms. As the experimental background of the study, n-type single crystalline silicon (Si) ingot are cut into Si wafer with a thickness of 375 mu m using a wire saw machine. In order to optimize the cutting parameters successfully, a two-step study has been organized as (i) a detailed study on multiple nonlinear regression analysis of the process parameters for predicting the feed rate and wire speed effects, (ii) design and optimization steps. Regression models include linear, quadratic, trigonometric, logarithmic and their rational forms for the same surface roughness problem. In design and optimization section, four distinct stochastic optimization algorithms (Differential Evaluation, Nelder-Mead, Random Search and Simulated Annealing) have been performed systematically to avoid inherent scattering of the stochastic processes. To investigate the advantages and disadvantages of the introduced mathematical processes for the similar cutting process problems, a review list are also given for the optimization on volumetric metal removal rate (VMRR), wear ratio (WR), material removal rate (MRR) and surface roughness (SR) by distinguishing the modeling methodology, model types, and optimization algorithms. It is also shown that different rational regression models can be utilized with the collaboration of stochastic optimization methods successfully to minimize the surface roughness of Si wafers.
机译:通过随机算法研究了系统的切削工艺设计和优化问题,以使表面粗糙度最小化。作为研究的实验背景,使用线锯机将n型单晶硅(Si)锭切成厚度为375μm的硅片。为了成功地优化切削参数,组织了两步研究,即(i)对工艺参数进行多元非线性回归分析以预测进给速度和线速度影响的详细研究,(ii)设计和优化步骤。对于相同的表面粗糙度问题,回归模型包括线性,二次,三角,对数及其有理形式。在设计和优化部分,系统地执行了四种不同的随机优化算法(差分评估,Nelder-Mead,随机搜索和模拟退火),以避免随机过程的固有分散。为了研究针对类似的切削过程问题引入的数学过程的优缺点,还提供了一个清单,以优化体积金属去除率(VMRR),磨损率(WR),材料去除率(MRR)和表面通过区分建模方法,模型类型和优化算法来实现粗糙度(SR)。还表明,可以与随机优化方法一起成功地利用不同的有理回归模型来最小化硅晶片的表面粗糙度。

著录项

  • 来源
    《Solar Energy》 |2018年第2期|109-124|共16页
  • 作者单位

    Izmir Katip Celebi Univ, Fac Engn & Architecture, Dept Mat Sci & Engn, TR-35620 Izmir, Turkey;

    Izmir Katip Celebi Univ, Fac Engn & Architecture, Dept Mech Engn, TR-35620 Izmir, Turkey;

    Dokuz Eylul Univ, Fac Engn, Dept Met & Mat Engn, TR-35370 Izmir, Turkey;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Silicon wafer; Cutting parameters; Regression models; Minimize the surface roughness;

    机译:硅片;切削参数;回归模型;最小化表面粗糙度;
  • 入库时间 2022-08-18 00:22:48

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