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Integrated circuit fabrication method for die level metal density gradient to improve flip chip package reliability
Integrated circuit fabrication method for die level metal density gradient to improve flip chip package reliability
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机译:芯片级金属密度梯度提高倒装芯片封装可靠性的集成电路制造方法
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摘要
An integrated circuit has metal bumps on the top surface that create a potentially destructive stress on the underlying layers when the metal bumps are formed. Ensuring a minimum metal concentration in the underlying metal interconnect layers has been implemented to reduce the destructive effect. The minimum metal concentration is highest in the corners, next along the border not in the corner, and next is the interior. The regions in an interconnect layer generally under the metal bump require more concentration than adjacent regions not under a bump. Lesser concentration is required for the metal interconnect layers that are further from the surface of the integrated circuit. The desired metal concentration is achieved by first trying a relatively simple solution. If that is not effective, different approaches are attempted until the minimum concentration is reached or until the last approach has been attempted.
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