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SAPPHIRE SUBSTRATE STRUCTURE FOR PATTERN ETCHING AND METHOD OF FORMING PATTERN SAPPHIRE SUBSTRATE
SAPPHIRE SUBSTRATE STRUCTURE FOR PATTERN ETCHING AND METHOD OF FORMING PATTERN SAPPHIRE SUBSTRATE
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机译:用于图案刻蚀的蓝宝石基质结构和形成图案蓝宝石基质的方法
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摘要
The present invention discloses a sapphire substrate structure for pattern etching and method of forming a pattern sapphire substrate (PSS). The sapphire substrate after pattern etching is suitable to be used as the substrate of a light-emitting device. The sapphire substrate structure comprises a photoresist layer, an underlayer, and a sapphire substrate. The photoresist layer is a uniform layer made of G-line photoresist, I-line photoresist, 248 nm DIN photoresist, or 193 nm Arf photoresist and comprises a flat surface. The underlayer is a uniform layer made of an organic or inorganic compound and comprises a flat surface. The sapphire substrate is formed by epitaxy, while the photoresist layer and the underlayer are formed by coating. After the sapphire substrate structure is formed, it is step by step transformed into a pattern sapphire substrate through an exposure/development process, an etching process, and a cleaning process subsequently.
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