Improvement the light extraction efficiencies with patterned sapphire substrates by wet and ICP etching method

摘要

In this study, sapphire substrates patterned by a selective chemical wet and an inductively coupled plasma (ICP) etching technique was proposed to improve the performance of GaN-based light-emitting diodes (LEDs). The light output power of LEDs on ICP-etching patterned substrates was better than the LED on wet-etching patterned substrates about 17%.