METHOD FOR ETCHING SELECTIVELY A SURFACE OF A PATTERNED SAPPHIRE SUBSTRATE AND THE PATTERNED SAPPHIRE SUBSTRATE FOR REUSE

摘要

The present invention relates to a selective etching method for a recycling PSS. The selective etching method includes a step (a) of preparing a PSS having a GaN epitaxial layer formed on the upper surface thereof; a step (b) of primarily etching the GaN epitaxial layer on an area of the PSS, in which a fine pattern is formed, by using the selective etching method; and a step (c) of completely removing the GaN epitaxial layer by secondarily etching the GaN epitaxial layer by using the selective etching method. The sapphire substrate is a patterned sapphire substrate in which fine patterns are formed on the surface thereof. According to the present invention, in which the fine patterns are not damaged and the epitaxial layer is completely removed, is obtained.