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ELECTRODE FOR OXIDE SEMICONDUCTOR, METHOD OF FORMING THE SAME, AND OXIDE SEMICONDUCTOR DEVICE PROVIDED WITH THE ELECTRODE
ELECTRODE FOR OXIDE SEMICONDUCTOR, METHOD OF FORMING THE SAME, AND OXIDE SEMICONDUCTOR DEVICE PROVIDED WITH THE ELECTRODE
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机译:氧化物半导体用电极,其形成方法以及具有该电极的氧化物半导体装置
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摘要
To make it possible to form a metal electrode of low electrical contact resistance on a conductive indium-containing oxide semiconductor layer constituting a device active layer of a thin-film transistor or the like. Between an indium-containing oxide semiconductor layer and a metal electrode layer provided above this layer for passing device operating current, which can reduce indium oxide or the like of the oxide semiconductor layer. A metallic oxide layer and a metal layer are formed using as material a metal film including an easily oxidable metal, and further an indium-rich layer in which reduced indium is accumulated is formed at a boundary between the metallic oxide layer and the metal layer.
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