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LIGHT-REFLECTIVE PHOTOMASK AND MASK BLANK FOR EUV EXPOSURE, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
LIGHT-REFLECTIVE PHOTOMASK AND MASK BLANK FOR EUV EXPOSURE, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
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机译:用于EUV曝光的光反射性光掩膜和掩膜掩膜以及半导体器件的制造方法
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摘要
According to one embodiment, a light-reflective photomask including a circuit pattern area, and an outside area positioned outside the circuit pattern area includes a substrate, a low-reflectivity layer provided in both the circuit pattern area, and the outside area, formed on the substrate, including at least a conductive layer, and comprising a first reflectivity for deep ultraviolet light, a multilayer reflection layer provided in the circuit pattern area, and formed on the low-reflectivity layer, and a light-absorber provided in the circuit pattern area, formed on the multilayer reflection layer, including a circuit pattern, and comprising a second reflectivity for deep ultraviolet light. The first reflectivity is lower than or equal to the second reflectivity.
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