EUV MASK BLANK, PHOTOMASK MANUFACTURED BY USING THE EUV MASK BLANK, LITHOGRAPHY APPARATUS USING THE PHOTOMASK AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING THE PHOTOMASK

摘要

An extreme ultraviolet (EUV) mask blank is provided. The EUV mask blank includes a substrate having a first surface and a second surface opposed to each other, a reflective layer having first reflective layers and second reflective layers alternately stacked on the first surface of the substrate, a capping layer on the reflective layer, and a hydrogen absorber layer between the reflective layer and the capping layer, the hydrogen absorber layer configured to store hydrogen and being in contact with the capping layer.