EUV mask blank, photomask made by using the EUV mask blank, lithography apparatus using the photomask, and methods of manufacturing a semiconductor device using the photomask

摘要

An extreme ultraviolet (EUV) mask blank (100) is provided. The EUV mask blank (100) has a substrate (110) having a first surface (110a) and a second surface (110b) opposite to each other, a reflective layer (120), which first reflective layers (121) and second reflective ones Layers (122) stacked alternately on the first surface (110a) of the substrate (110), a cap layer (140) on the reflective layer (120), and a hydrogen absorber layer (130) between the reflective layer (120) and the cap layer (140), wherein the hydrogen absorber layer (130) is configured to store hydrogen and in contact with the capping layer (140).