首页>
外国专利>
Semiconductor devices including bipolar transistors, CMOS transistors and DMOS transistors, and methods of manufacturing the same
Semiconductor devices including bipolar transistors, CMOS transistors and DMOS transistors, and methods of manufacturing the same
展开▼
机译:包括双极型晶体管,CMOS晶体管和DMOS晶体管的半导体器件及其制造方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
Semiconductor devices having a bipolar transistor, a CMOS transistor, a drain extension MOS transistor and a double diffused MOS transistor are provided. The semiconductor device includes a semiconductor substrate including a logic region in which a logic device is formed and a high voltage region in which a high power device is formed, trenches in the semiconductor substrate, isolation layers in respective ones of the trenches, and at least one field insulation layer disposed at a surface of the semiconductor substrate in the high voltage region. Related methods are also provided.
展开▼