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Method for fabricating a metal-insulator-metal (MIM) capacitor having capacitor dielectric layer formed by atomic layer deposition (ALD)
Method for fabricating a metal-insulator-metal (MIM) capacitor having capacitor dielectric layer formed by atomic layer deposition (ALD)
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机译：具有由原子层沉积（ALD）形成的电容器电介质层的金属-绝缘体-金属（MIM）电容器的制造方法
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摘要
In a thin film transistor, each of an upper electrode and a lower electrode is formed of at least one material selected from the group consisting of a metal and a metal nitride, represented by TiN, Ti, W, WN, Pt, Ir, Ru. A capacitor dielectric film is formed of at least one material selected from the group consisting of ZrO2, HfO2, (Zrx, Hf1-x)O2 (0x1), (Zry, Ti1-y)O2 (0y1), (Hfz, Ti1-z)O2 (0z1), (Zrk, Til, Hfm)O2 (0k, l, m1, k+l+m=1), by an atomic layer deposition process. The thin film transistor thus formed has a minimized leakage current and an increased capacitance.
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机译：在薄膜晶体管中，上电极和下电极均由选自由金属和金属氮化物组成的组中的至少一种材料形成，以TiN，Ti，W，WN，Pt，Ir，Ru表示。电容器介电膜由选自以下的至少一种材料形成：ZrO 2 ，HfO 2 ，（Zr x ，Hf < Sub> 1-x ）O 2 （0 y ，Ti 1-y ） O 2 （0 z ，Ti 1-z ）O 2 （ 0 k ，Ti l ，Hf m ）O 2 （0 < k，l，m <1，k + 1 + m = 1），通过原子层沉积工艺。这样形成的薄膜晶体管具有最小的泄漏电流和增大的电容。
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