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USE OF A CONDUCTIVE COMPOSITION CONTAINING LEAD-TELLURIUM-BASED OXIDE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES WITH LIGHTLY DOPED EMITTERS
USE OF A CONDUCTIVE COMPOSITION CONTAINING LEAD-TELLURIUM-BASED OXIDE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES WITH LIGHTLY DOPED EMITTERS
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机译:含铅-碲基氧化物的导电组合物在轻掺杂半导电装置制造中的使用
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摘要
The present invention provides a process for using a thick-film conductive paste composition to form an electrode on a silicon semiconductor device, e.g, a photovoltaic cell, containing a lightly doped emitter. The thick-film paste comprises a source of an electrically conductive metal and a Pb—Te-based oxide dispersed in an organic medium. Also provided are devices made by the process and a photovoltaic cell comprising a lightly doped emitter and an electrode formed from the thick-film conductive paste composition.
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