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Method for forming resistive switching memory elements with improved switching behavior
Method for forming resistive switching memory elements with improved switching behavior
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机译:形成具有改善的开关性能的电阻式开关存储元件的方法
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摘要
Methods for producing RRAM resistive switching elements having optimal switching behavior include crystalline phase structural changes. Structural changes indicative of optimal switching behavior include hafnium oxide phases in an interfacial region between a resistive switching layer and an electrode.
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