Time dependent dielectric breakdown (TDDB) test structure of semiconductor device and method of performing TDDB test using the same

摘要

A time dependent dielectric breakdown (TDDB) test structure of a semiconductor device includes: a first test cell having a first test pattern in which a dielectric layer is formed between two electrodes; a second test cell spaced apart from the first test cell and having a second test pattern in which a dielectric layer is formed between two electrodes; and a barrier region configured to prevent electrical interference from occurring between the first test cell and the second test cell during a TDDB test.