TIME DEPENDENT DIELECTRIC BREAKDOWN TEST PATTERN AND METHOD FOR TESTING TDDB OF MOS CAPACITOR DIELECTRIC

摘要

Reduce the time it takes to test accordingly meurosseo This line is also used in measurement equipment time required for testing can reduce the measurement cost, but also improve the precision of the measurement results from the statistical aspects meurosseo get a larger number of test data at the same time to provide a TDDB test pattern, and using the same MOS capacitor dielectric film TDDB test way. The present invention TDDB test patterns to an aspect of the MOS capacitor and the MOS transistors and the MOS capacitor and the plurality of unit test pattern cell configured to operate the MOS transistor in the fuse for controlling and, each of the unit test pattern cell Moss and a first voltage supply for applying a stress voltage at the same time to the capacitor and MOS transistor, and measuring a change of the total drain current of the plurality of unit test pattern cell in succession to measure the total break-down time of the plurality of unit test pattern cell of: (VFN voltage Forcing node) and the current meter and each MOS transistor of said plurality of unit test pattern cell ammeter and said first voltage supply and a plurality of voltage polsing nodes, each located between the fuse of each unit of the test pattern cell drain current measurement nodes, each located between the drain stage (C drain urrent Measuring Node: including DCMN) and, a second voltage supply for applying a voltage to the drain terminal of the MOS transistor is characterized by configured.