Accelerated testing for time dependent dielectric breakdown (TDDB) evaluation of embedded DRAM capacitors using tantalum pentoxide

摘要

Mechanisms of breakdown in Ta_2O_5 are evaluated by studying the leakage and TDDB characteristics, and a model close to those widely accepted for SiO_2 is suggested. Various statistical modeling approaches are evaluated and used to verify this breakdown model. Accelerated testing techniques are also outlined that can dramatically improve parameter estimates while slashing reliability test times.