首页>
外国专利>
Static random access memory cell with single-sided buffer and asymmetric construction
Static random access memory cell with single-sided buffer and asymmetric construction
展开▼
机译:具有单侧缓冲器和非对称结构的静态随机存取存储单元
展开▼
页面导航
摘要
著录项
相似文献
摘要
Balanced electrical performance in a static random access memory (SRAM) cell with an asymmetric context such as a buffer circuit. Each memory cell includes a circuit feature, such as a read buffer, that has larger transistor sizes and features than the other transistors within the cell, and in which the feature asymmetrical influences the smaller cell transistors. For best performance, pairs of cell transistors are to be electrically matched with one another. One or more of the cell transistors nearer to the asymmetric feature are constructed differently, for example with different channel width, channel length, or net channel dopant concentration, to compensate for the proximity effects of the asymmetric feature.
展开▼