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Oxide deposition by using a double liner approach for reducing pattern density dependence in sophisticated semiconductor devices
Oxide deposition by using a double liner approach for reducing pattern density dependence in sophisticated semiconductor devices
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机译:通过使用双衬层方法进行氧化物沉积,以降低复杂半导体器件中的图形密度依赖性
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摘要
A silicon dioxide material may be provided in sophisticated semiconductor devices in the form of a double liner including an undoped silicon dioxide material in combination with a high density plasma silicon dioxide, thereby providing reduced dependency on pattern density. In some illustrative embodiments, the silicon dioxide double liner may be used as a spacer material and as a hard mask material in process strategies for incorporating a strain-inducing semiconductor material.
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