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Oxide Deposition by Using a Double Liner Approach for Reducing Pattern Density Dependence in Sophisticated Semiconductor Devices
Oxide Deposition by Using a Double Liner Approach for Reducing Pattern Density Dependence in Sophisticated Semiconductor Devices
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机译:使用双线性方法沉积氧化物,以减少复杂半导体器件中的图形密度依赖性
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摘要
A silicon dioxide material may be provided in sophisticated semiconductor devices in the form of a double liner including an undoped silicon dioxide material in combination with a high density plasma silicon dioxide, thereby providing reduced dependency on pattern density. In some illustrative embodiments, the silicon dioxide double liner may be used as a spacer material and as a hard mask material in process strategies for incorporating a strain-inducing semiconductor material.
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