Methods of making laterally double diffused metal oxide semiconductor transistors having a reduced surface field structure

摘要

An LDMOS transistor includes a substrate of semiconductor material, an insulator layer overlying the substrate, a semiconductor layer overlying the insulator layer, a RESURF region, and a gate. The semiconductor layer includes a first conductivity type well region, a second conductivity type source region in contact with the first conductivity type well region, a second conductivity type drain region. The RESURF region includes at least one first conductivity type material portion, and at least one portion of the at least one first conductivity type material portion electrically coupled to the first conductivity type well region. A semiconductor material having a second conductivity type is located below the RESURF region. The second conductivity type semiconductor material is also located over a part of the RESURF region. The gate is located over the first conductivity type well region and over the RESURF region.