首页>
外国专利>
SOLUTION BASED LANTHANIDE AND GROUP III PRECURSORS FOR ATOMIC LAYER DEPOSITION
SOLUTION BASED LANTHANIDE AND GROUP III PRECURSORS FOR ATOMIC LAYER DEPOSITION
展开▼
机译:原子层沉积的基于解决方案的镧系元素和III类前体
展开▼
页面导航
摘要
著录项
相似文献
摘要
Oxygen free cyclopentadienyl solvent based precursor formulations having the general formula: (R1R2R3R4R5Cp)3*M wherein R1, R2, R3, R4, and R5 are H or hydrocarbon CnHm (n=1 to 10, m=1 to 2n+1), Cp is cyclopentadienyl and M is an element from the lanthanide series or Group III materials.
展开▼