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Solution-based lanthanides and group III precursors for atomic layer deposition
Solution-based lanthanides and group III precursors for atomic layer deposition
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机译:基于溶液的镧系元素和III类前驱体,用于原子层沉积
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摘要
Oxygen free cyclopentadienyl solvent based precursor formulations having the general formula: (R1R2R3R4R5Cp)3*M wherein R1, R2, R3, R4, and R5 are H or hydrocarbon CnHm (n=1 to 10, m=1 to 2n+1), Cp is cyclopentadienyl and M is an element from the lanthanide series or Group III materials.
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