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VERTICAL STACKING OF GRAPHENE IN A FIELD-EFFECT TRANSISTOR
VERTICAL STACKING OF GRAPHENE IN A FIELD-EFFECT TRANSISTOR
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机译:场效应晶体管中石墨烯的垂直堆积
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摘要
A graphene field-effect transistor is disclosed. The graphene field-effect transistor includes a first graphene sheet, a first gate layer coupled to the first graphene sheet and a second graphene sheet coupled to the first gate layer opposite the first gate layer. The first gate layer is configured to influence an electric field within the first graphene sheet as well as to influence an electric field of the second graphene sheet.
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