²-SiAlON represented by a general formula Si 6-z Al z O z N 8-z with Eu dissolved therein, whose spin density corresponding to absorption g = 2.00 ± 0.02 at 25°C obtained by the electron spin resonance method is equal to or lower than 6.0 × 10 16 spins/g. A method of manufacturing the ²-SiAlON includes: a mixing step of mixing ²-SiAlON materials; a baking step of baking the ²-SiAlON having undergone the mixing step; a heating step of increasing the ambient temperature of the materials having undergone the mixing step from 1500°C to a baking temperature of the baking step at a rate equal to or lower than 2°C/min.; an annealing step of annealing the ²-SiAlON having undergone the baking step; and an acid treatment step of acid-treating the ²-SiAlON having undergone the annealing step. The objective of the present invention is to provide ²-SiAlON capable of achieving high luminescent efficiency, a method of manufacturing the ²-SiAlON, and a light-emitting device using the ²-SiAlON.
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机译：由其中溶解有Eu的通式Si 6-z Al z O z N 8-z表示的2 -SiAlON，其电子密度对应于通过电子自旋共振法在25°C时的吸收g = 2.00±0.02等于或低于6.0×10 16 spins / g。一种制造“ -SiAlON”的方法包括：混合“ -SiAlON”材料的混合步骤;以及“混合”步骤。烘烤已经经过混合步骤的β-SiAlON的烘烤步骤;加热步骤，以等于或低于2℃/ min的速度将经过混合步骤的材料的环境温度从1500℃升高到烘烤步骤的烘烤温度。退火步骤，用于对经过烘烤步骤的β-SiAlON进行退火;酸处理工序是对已经进行了退火处理的β-SiAlON进行酸处理的工序。本发明的目的是提供一种能够实现高发光效率的β-SiAlON，该β-SiAlON的制造方法以及使用该β-SiAlON的发光装置。
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