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METHOD FOR MANUFACTURING SUBSTRATE AND TEMPLATE OF NITRIDE SEMICONDUCTOR EPITAXIAL STRUCTURE BASED ON IMPROVED LIGHT-EXTRACTION TECHNOLOGY
METHOD FOR MANUFACTURING SUBSTRATE AND TEMPLATE OF NITRIDE SEMICONDUCTOR EPITAXIAL STRUCTURE BASED ON IMPROVED LIGHT-EXTRACTION TECHNOLOGY
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机译:基于改进的吸光技术的氮化物半导体外延结构基体和模板的制备方法
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摘要
The present invention relates to a method of manufacturing a template and a substrate for a semiconductor device of a nitride semiconductor epitaxial structure which improves crystallizability of a nitride semiconductor layer by preventing defects formed between patterns in which a hemispherical micro-lens pattern between nitride semiconductor layers is formed on a substrate such as a sapphire from being expanded to the upper side by forming being expanded to the upper side using a template layer structure. The template layer structure patterns the substrate such as a sapphire with a hemispherical micro-lens array (for example, hemispherically patterned sapphire substrate (HPSS)) or forms a hemispherical micro-lens array pattern on the substrate such as a sapphire with an oxide film (for example, SiO2), and then forms a nitride semiconductor and forms a hemispherical micro-lens array between the nitride semiconductor layers with the oxide film (for example, SiO2) over 1 time.
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