GALLIUM NITRIDE MONO-CRYSTALLINE SUBSTRATE, CAPABLE OF STANDARDIZING THE SURFACE OF AN EPITAXIAL LAYER ON THE SUBSTRATE, A NITRIDE-BASED SEMICONDUCTOR EPITAXIAL SUBSTRATE, A NITRIDE-BASED SEMICONDUCTOR DEVICE, AND A METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A gallium nitride mono-crystalline substrate, a nitride-based semiconductor epitaxial substrate, a nitride-based semiconductor device, and a method for manufacturing the same are provided to reduce the surface roughness of a gallium nitride mono-crystalline.;CONSTITUTION: A nitride-based semiconductor epitaxial substrate(10) includes gallium nitride mono-crystalline substrate(11) and a nitride-based compound semiconductor layer(12). An electrode for supplying a current is attached to the nitride-based semiconductor epitaxial substrate. The nitride-based semiconductor epitaxial substrate is epitaxial-grown by a molecular-beam-epitaxy method.;COPYRIGHT KIPO 2010