FABRICATION OF TEMPLATES FOR HIGH-QUALITY GROUP 3 NITRIDE-BASED HOMOEPITAXIAL SUBSTRATE AND ITS RELATED LIGHT-EMITTING MULTISTRUCTURE AND GROWTH OF 3 NITRIDE-BASED EPITAXIAL SEMICONDUCTOR THIN FILM USING TEMPLATES

摘要

A homoepitaxial substrate for high-quality group 3 nitride-based epitaxial semiconductor thin film growth, and fabrication and growth of templates for homoepitaxial substrate and light-emitting multistructure are provided to dissipate heat generated during drive of a nitride-based semiconductor device readily. Fabrication of templates for high-quality group 3 nitride-based homoepitaxial substrate includes a one-step bonding process and a two-step bonding process. The one-step bonding process includes the steps of growing gallium nitride or aluminum nitride at a temperature of 700 degrees of centigrade or less using a metalorganic chemical vapor deposition, and depositing/growing a 3 nitride-based epitaxial semiconductor thin film on an Al2O3 growth substrate(110) using a high temperature buffer layer(130) at a temperature of 900 degrees of centigrade or more.